All MOSFET. NDF04N60Z Datasheet

 

NDF04N60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: NDF04N60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO220FP

NDF04N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDF04N60Z Datasheet (PDF)

0.1. ndf04n60z ndp04n60z ndd04n60z.pdf Size:148K _1

NDF04N60Z
NDF04N60Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http://onsemi.com • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A • These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Ω Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

0.2. ndf04n60z ndp04n60z ndd04n60z.pdf Size:130K _onsemi

NDF04N60Z
NDF04N60Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features http://onsemi.com • Low ON Resistance • Low Gate Charge • ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2 A • 100% Avalanche Tested 600 V 2.0 Ω • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) D (

 

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