NDF05N50Z Datasheet and Replacement
Type Designator: NDF05N50Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 18.5 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 68 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220FP
NDF05N50Z Datasheet (PDF)
ndf05n50z ndp05n50z ndd05n50z.pdf

NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source
Datasheet: NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , BS170 , NDF06N60Z , FDMC8327L , NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z .
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