All MOSFET. 2N6768JAN Datasheet

 

2N6768JAN Datasheet and Replacement


   Type Designator: 2N6768JAN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 190 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO204
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2N6768JAN Datasheet (PDF)

 8.1. Size:140K  1
 2n6768.pdf pdf_icon

2N6768JAN

 8.2. Size:144K  international rectifier
 2n6768 irf350.pdf pdf_icon

2N6768JAN

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 8.3. Size:64K  omnirel
 2n6764 2n6766 2n6768 2n6770.pdf pdf_icon

2N6768JAN

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION

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Datasheet: 2N6766 , 2N6766JAN , 2N6766JANTX , 2N6766JANTXV , 2N6766JTX , 2N6766JTXV , 2N6767 , 2N6768 , SKD502T , 2N6768JANTX , 2N6768JANTXV , 2N6768JTX , 2N6768JTXV , 2N6769 , 2N6770 , 2N6770JANTX , 2N6770JANTXV .

History: 2SK795 | 2SK1086 | IXTZ20N60MB | LPM9926SOF | IXFH110N10P | RSE002P03TL | 2SK400

Keywords - 2N6768JAN MOSFET datasheet

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