NDF11N50Z Specs and Replacement
Type Designator: NDF11N50Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO220FP
NDF11N50Z substitution
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NDF11N50Z datasheet
ndf11n50z.pdf
NDF11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 4.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 500 V Compliant 0.52 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol NDF Unit D (... See More ⇒
Detailed specifications: NDF06N60Z, FDMC8327L, NDF06N62Z, NDF08N50Z, NDF08N60Z, NDF10N60Z, FDMS7678, NDF10N62Z, IRFP460, NIC9N05TS1, NID6002N, NID9N05CL, NIF9N05CL, NIMD6001, FDD4N60NZ, NTA4001N, NTA4151P
Keywords - NDF11N50Z MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FS20UM-5 | FS5KM-6
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