All MOSFET. NDF11N50Z Datasheet

 

NDF11N50Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDF11N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO220FP

 NDF11N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDF11N50Z Datasheet (PDF)

 ..1. Size:144K  onsemi
 ndf11n50z.pdf

NDF11N50Z NDF11N50Z

NDF11N50ZN-Channel Power MOSFET500 V, 0.52 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 4.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS500 VCompliant 0.52 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol NDF UnitD (

Datasheet: NDF06N60Z , FDMC8327L , NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , IRFP460 , NIC9N05TS1 , NID6002N , NID9N05CL , NIF9N05CL , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P .

History: BUZ76

 

 
Back to Top