NIC9N05TS1 PDF and Equivalents Search

 

NIC9N05TS1 Specs and Replacement

Type Designator: NIC9N05TS1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 52 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: NA

NIC9N05TS1 substitution

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NIC9N05TS1 datasheet

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NIC9N05TS1

NIC9N05TS1 Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection http //onsemi.com MAXIMUM RATINGS (TJ = 25 C unless otherwise specified) Rating Symbol Value Unit Drain (Pins 2, 4) Drain-to-Source Voltage Internally Clamped VDSS 52-59 V Gate-to-Source Voltage - Continuous VGS 15 V MPWR Operating and Storage Temperature Range TJ, Tstg -55 to ... See More ⇒

Detailed specifications: FDMC8327L, NDF06N62Z, NDF08N50Z, NDF08N60Z, NDF10N60Z, FDMS7678, NDF10N62Z, NDF11N50Z, IRFZ44, NID6002N, NID9N05CL, NIF9N05CL, NIMD6001, FDD4N60NZ, NTA4001N, NTA4151P, NTA4153N

Keywords - NIC9N05TS1 MOSFET specs

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