All MOSFET. NIC9N05TS1 Datasheet

 

NIC9N05TS1 Datasheet and Replacement


   Type Designator: NIC9N05TS1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 52 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: NA
 

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NIC9N05TS1 Datasheet (PDF)

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NIC9N05TS1

NIC9N05TS1Protected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD Protectionhttp://onsemi.comMAXIMUM RATINGS (TJ = 25C unless otherwise specified)Rating Symbol Value UnitDrain(Pins 2, 4)Drain-to-Source Voltage Internally Clamped VDSS 52-59 VGate-to-Source Voltage - Continuous VGS 15 VMPWROperating and Storage Temperature Range TJ, Tstg -55 to

Datasheet: FDMC8327L , NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , IRFZ44 , NID6002N , NID9N05CL , NIF9N05CL , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N .

History: SIHG22N60S

Keywords - NIC9N05TS1 MOSFET datasheet

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