NID6002N PDF and Equivalents Search

 

NID6002N Specs and Replacement

Type Designator: NID6002N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: DPAK

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NID6002N datasheet

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NID6002N

NID6002N Preferred Device Self-Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N-Channel, DPAK http //onsemi.com HDPlus devices are an advanced series of power MOSFETs VDSS ID TYP which utilize ON Semiconductor s latest MOSFET technology (Clamped) RDS(on) TYP (Limited) process to achieve the lowest possible on-resistance per silicon area while incorporatin... See More ⇒

Detailed specifications: NDF06N62Z, NDF08N50Z, NDF08N60Z, NDF10N60Z, FDMS7678, NDF10N62Z, NDF11N50Z, NIC9N05TS1, IRF640, NID9N05CL, NIF9N05CL, NIMD6001, FDD4N60NZ, NTA4001N, NTA4151P, NTA4153N, NTA7002N

Keywords - NID6002N MOSFET specs

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