All MOSFET. NID6002N Datasheet

 

NID6002N Datasheet and Replacement


   Type Designator: NID6002N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: DPAK
 

 NID6002N substitution

   - MOSFET ⓘ Cross-Reference Search

 

NID6002N Datasheet (PDF)

 ..1. Size:68K  onsemi
 nid6002n.pdf pdf_icon

NID6002N

NID6002NPreferred DeviceSelf-Protected FETwith Temperature and Current Limit65 V, 6.5 A, Single N-Channel, DPAKhttp://onsemi.comHDPlus devices are an advanced series of power MOSFETsVDSS ID TYPwhich utilize ON Semiconductors latest MOSFET technology(Clamped) RDS(on) TYP (Limited)process to achieve the lowest possible on-resistance per silicon areawhile incorporatin

Datasheet: NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 , IRFZ44 , NID9N05CL , NIF9N05CL , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N , NTA7002N .

History: BUK110-50DL | IRLL2703

Keywords - NID6002N MOSFET datasheet

 NID6002N cross reference
 NID6002N equivalent finder
 NID6002N lookup
 NID6002N substitution
 NID6002N replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.