NID9N05CL MOSFET. Datasheet pdf. Equivalent
Type Designator: NID9N05CL
Marking Code: D9N05CL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 52 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.181 Ohm
Package: DPAK
NID9N05CL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NID9N05CL Datasheet (PDF)
nid9n05cl.pdf
NID9N05CLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection - HBM 5000 V
nid9n05clt4g.pdf
NID9N05CL, NID9N05ACLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection -
nid9n05acl nid9n05aclt4g.pdf
NID9N05CL, NID9N05ACLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection -
nid9n05acl nid9n05bcl.pdf
NID9N05ACL, NID9N05BCLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagewww.onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection - HB
Datasheet: NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 , NID6002N , IRFZ44 , NIF9N05CL , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N , NTA7002N , NTB25P06 .
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