All MOSFET. NIF9N05CL Datasheet

 

NIF9N05CL Datasheet and Replacement


   Type Designator: NIF9N05CL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 52 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1418 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT223
 

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NIF9N05CL Datasheet (PDF)

 ..1. Size:1447K  cn vbsemi
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NIF9N05CL

NIF9N05CLwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unles

 0.1. Size:71K  onsemi
 nif9n05cl-d.pdf pdf_icon

NIF9N05CL

NIF9N05CLProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD Protection in a SOT-223 Packagehttp://onsemi.comBenefitsVDSS RDS(ON) TYP ID MAX High Energy Capability for Inductive Loads(Clamped) Low Switching Noise Generation52 V 107 mW 2.6 AFeatures Diode Clamp Between Gate and SourceDrain(Pins 2, 4) ESD Protection - HBM 500

Datasheet: NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 , NID6002N , NID9N05CL , IRFP260N , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N , NTA7002N , NTB25P06 , NTB35N15 .

Keywords - NIF9N05CL MOSFET datasheet

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