All MOSFET. FDD4N60NZ Datasheet

 

FDD4N60NZ Datasheet and Replacement


   Type Designator: FDD4N60NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.3 nC
   tr ⓘ - Rise Time: 15.1 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: DPAK
 

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FDD4N60NZ Datasheet (PDF)

 ..1. Size:607K  fairchild semi
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FDD4N60NZ

November 2013FDD4N60NZN-Channel UniFETTM II MOSFET600 V, 3.4 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on-

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History: IRF6725M

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