FDD4N60NZ PDF and Equivalents Search

 

FDD4N60NZ Specs and Replacement

Type Designator: FDD4N60NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.1 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: DPAK

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FDD4N60NZ datasheet

 ..1. Size:607K  fairchild semi
 fdd4n60nz.pdf pdf_icon

FDD4N60NZ

November 2013 FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF) on-... See More ⇒

Detailed specifications: FDMS7678, NDF10N62Z, NDF11N50Z, NIC9N05TS1, NID6002N, NID9N05CL, NIF9N05CL, NIMD6001, IRF640N, NTA4001N, NTA4151P, NTA4153N, NTA7002N, NTB25P06, NTB35N15, NTB45N06, NTB45N06L

Keywords - FDD4N60NZ MOSFET specs

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