NTD110N02R Datasheet and Replacement
Type Designator: NTD110N02R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: DPAK
NTD110N02R substitution
NTD110N02R Datasheet (PDF)
ntd110n02r.pdf

NTD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge V(BR)DSS RDS(on) TYP ID MAX Optimized for High Side Switching Requirements in24 V 4.1 mW @ 10 V 110 AHigh-Efficiency DC-DC Converters Pb-Fre
ntd110n02rg std110n02rt4g.pdf

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter
Datasheet: NTB5405N , NTB5426N , NTB5605P , NTB60N06 , NTB6410AN , NTB6411AN , NTB6412AN , NTB6413AN , K4145 , NTD14N03R , NTD18N06L , NTD20N03L27 , NTD20N06 , NTD20N06L , NTD20P06L , NTD24N06 , NTD24N06L .
Keywords - NTD110N02R MOSFET datasheet
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