NTD14N03R Datasheet and Replacement
Type Designator: NTD14N03R
Marking Code: 14N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.8 nC
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 62 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: DPAK
NTD14N03R substitution
NTD14N03R Datasheet (PDF)
ntd14n03r.pdf
NTD14N03RPower MOSFET14 Amps, 25 VoltsN-Channel DPAKhttp://onsemi.comFeatures Planar HD3e Process for Fast Switching Performance14 AMPERES, 25 VOLTS Low RDS(on) to Minimize Conduction LossRDS(on) = 70.4 mW (Typ) Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements inN-CHANNELHigh-Efficiency DC-DC ConvertersD
ntd14n03r-1g ntd14n03rg.pdf
NTD14N03R, NVD14N03RPower MOSFET14 Amps, 25 VoltsN-Channel DPAKhttp://onsemi.comFeatures Planar HD3e Process for Fast Switching Performance14 AMPERES, 25 VOLTS Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver LossRDS(on) = 70.4 mW (Typ) Low Gate Charge Optimized for High Side Switching Requirements inN-CHANNELHigh-Efficiency DC-DC Co
Datasheet: NTB5426N , NTB5605P , NTB60N06 , NTB6410AN , NTB6411AN , NTB6412AN , NTB6413AN , NTD110N02R , IRF1010E , NTD18N06L , NTD20N03L27 , NTD20N06 , NTD20N06L , NTD20P06L , NTD24N06 , NTD24N06L , NTD25P03L .
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