NTD24N06
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD24N06
Marking Code: 24N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 252
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
DPAK
NTD24N06
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD24N06
Datasheet (PDF)
..1. Size:81K onsemi
ntd24n06-001 ntd24n06g ntd24n06.pdf
NTD24N06Power MOSFET60 Volt, 24 AmpN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures60 V 32 mW 24 A Pb-Free Packages are AvailableN-ChannelTypical ApplicationsD Power Supplies Converters Power Motor Co
0.1. Size:81K onsemi
ntd24n06l ntd24n06lg.pdf
NTD24N06LPower MOSFET24 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.24 AMPERES, 60 VOLTSFeaturesRDS(on) = 0.036 W (Typ) Pb-Free Packages are AvailableN-ChannelTypical ApplicationsD Power Supplies Converters
0.2. Size:771K cn vbsemi
ntd24n06lt4g.pdf
NTD24N06LT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
Datasheet: NTB6413AN
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