NTD40N03R Datasheet and Replacement
Type Designator: NTD40N03R
Marking Code: T40N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 5.78 nC
tr ⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 254 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DPAK
NTD40N03R Datasheet (PDF)
ntd40n03r.pdf

NTD40N03RPower MOSFET45 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements inRDS(on) = 12.6 mW (Typ)High-Efficiency DC-DC Converters These are Pb-Fr
ntd40n03r.pdf

NTD40N03Rwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO
ntd40n03r-1g ntd40n03rg.pdf

NTD40N03RPower MOSFET45 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements inRDS(on) = 12.6 mW (Typ)High-Efficiency DC-DC Converters These are Pb-Fr
Datasheet: NTD24N06 , NTD24N06L , NTD25P03L , NTD2955 , NTD3055-094 , NTD3055-150 , NTD3055L104 , NTD3055L170 , IRF530 , NTD4302 , NTD4804N , NTD4805N , NTD4806N , NTD4808N , NTD4809N , NTD4810N , NTD4813N .
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