All MOSFET. NTD40N03R Datasheet

 

NTD40N03R Datasheet and Replacement


   Type Designator: NTD40N03R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.5 nS
   Cossⓘ - Output Capacitance: 254 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DPAK
 

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NTD40N03R Datasheet (PDF)

 ..1. Size:122K  onsemi
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NTD40N03R

NTD40N03RPower MOSFET45 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements inRDS(on) = 12.6 mW (Typ)High-Efficiency DC-DC Converters These are Pb-Fr

 ..2. Size:1437K  cn vbsemi
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NTD40N03R

NTD40N03Rwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO

 0.1. Size:119K  onsemi
 ntd40n03r-1g ntd40n03rg.pdf pdf_icon

NTD40N03R

NTD40N03RPower MOSFET45 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements inRDS(on) = 12.6 mW (Typ)High-Efficiency DC-DC Converters These are Pb-Fr

Datasheet: NTD24N06 , NTD24N06L , NTD25P03L , NTD2955 , NTD3055-094 , NTD3055-150 , NTD3055L104 , NTD3055L170 , TK10A60D , NTD4302 , NTD4804N , NTD4805N , NTD4806N , NTD4808N , NTD4809N , NTD4810N , NTD4813N .

History: NTD4805N | 2N7275R | NTD3055L104

Keywords - NTD40N03R MOSFET datasheet

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