NTD40N03R Datasheet. Specs and Replacement

Type Designator: NTD40N03R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.5 nS

Cossⓘ - Output Capacitance: 254 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: DPAK

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NTD40N03R datasheet

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NTD40N03R

NTD40N03R Power MOSFET 45 A, 25 V, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss http //onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge 45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements in RDS(on) = 12.6 mW (Typ) High-Efficiency DC-DC Converters These are Pb-Fr... See More ⇒

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NTD40N03R

NTD40N03R www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSO... See More ⇒

 0.1. Size:119K  onsemi
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NTD40N03R

NTD40N03R Power MOSFET 45 A, 25 V, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss http //onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge 45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements in RDS(on) = 12.6 mW (Typ) High-Efficiency DC-DC Converters These are Pb-Fr... See More ⇒

Detailed specifications: NTD24N06, NTD24N06L, NTD25P03L, NTD2955, NTD3055-094, NTD3055-150, NTD3055L104, NTD3055L170, IRFB3607, NTD4302, NTD4804N, NTD4805N, NTD4806N, NTD4808N, NTD4809N, NTD4810N, NTD4813N

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