NTD40N03R
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD40N03R
Marking Code: T40N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 5.78
nC
trⓘ - Rise Time: 19.5
nS
Cossⓘ -
Output Capacitance: 254
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
DPAK
NTD40N03R
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD40N03R
Datasheet (PDF)
..1. Size:122K onsemi
ntd40n03r.pdf
NTD40N03RPower MOSFET45 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements inRDS(on) = 12.6 mW (Typ)High-Efficiency DC-DC Converters These are Pb-Fr
..2. Size:1437K cn vbsemi
ntd40n03r.pdf
NTD40N03Rwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO
0.1. Size:119K onsemi
ntd40n03r-1g ntd40n03rg.pdf
NTD40N03RPower MOSFET45 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge45 AMPERES, 25 VOLTS Optimized for High Side Switching Requirements inRDS(on) = 12.6 mW (Typ)High-Efficiency DC-DC Converters These are Pb-Fr
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