NTD5807N MOSFET Datasheet: N-Ch, 40V, 23A. Full specification with pinout and replacement list

NTD5807N Specs and Replacement

Type Designator: NTD5807N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 111 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: DPAK

NTD5807N substitution

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NTD5807N datasheet

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NTD5807N Power MOSFET 40 V, 23 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 37 mW @ 4.5 V 16 A 40 V CCFL Backlight 31 mW @ 10 V 23 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchr... See More ⇒

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NTD5807NT www.VBsemi.com N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET A... See More ⇒

Detailed specifications: NTD5407N, NTD5413N, NTD5414N, NTD5802N, NTD5803N, NTD5804N, NTD5805N, NTD5806N, IRFZ46N, NTD5862N, NTD5865N, NTD5865NL, NTD5867NL, NTD6414AN, NTD6415AN, NTD6415ANL, NTD6416AN