NTD5807N Datasheet and Replacement
Type Designator: NTD5807N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 111 nS
Cossⓘ - Output Capacitance: 96 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: DPAK
NTD5807N substitution
NTD5807N Datasheet (PDF)
ntd5807nt4g.pdf

NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight
ntd5807n-d.pdf

NTD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications37 mW @ 4.5 V 16 A40 V CCFL Backlight31 mW @ 10 V 23 A DC Motor Control Class D AmplifierD Power Supply Secondary Side Synchr
ntd5807nt.pdf

NTD5807NTwww.VBsemi.comN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETA
Datasheet: NTD5407N , NTD5413N , NTD5414N , NTD5802N , NTD5803N , NTD5804N , NTD5805N , NTD5806N , STP65NF06 , NTD5862N , NTD5865N , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , NTD6415ANL , NTD6416AN .
History: SM6033NSF | NTTFS4937N | NTA4001N
Keywords - NTD5807N MOSFET datasheet
NTD5807N cross reference
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History: SM6033NSF | NTTFS4937N | NTA4001N



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