NTE4151P MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTE4151P
   Marking Code: TM*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45(min) V
   |Id|ⓘ - Maximum Drain Current: 0.76 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.1 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SC89

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