NTF6P02 MOSFET PDF: P-Ch, 20V, 10A. Datasheet. Full specification with pinout and replacement list

NTF6P02 Specs and Replacement

   Type Designator: NTF6P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 8.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT223

NTF6P02 substitution

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NTF6P02 datasheet

..1. Size:206K onsemi
ntf6p02 nvf6p02.pdf pdf_icon

NTF6P02, NVF6P02 MOSFET Power, P-Channel, SOT-223 -10 A, -20 V Features www.onsemi.com Low RDS(on) -10 AMPERES Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery -20 VOLTS Avalanche Energy Specified RDS(on) = 44 mW (Typ.) NVF Prefix for Automotive and Other Applications Requiring S Unique Site and Control Change Requirements; AEC-Q101 Qualifie... See More ⇒

0.1. Size:138K onsemi
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NTF6P02T3 Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http //onsemi.com Features Low RDS(on) -10 AMPERES Logic Level Gate Drive -20 VOLTS Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) Avalanche Energy Specified Pb-Free Package is Available S Typical Applications G Power Management in Portables and Battery-Powered Products, i.e. ... See More ⇒

0.2. Size:107K onsemi
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NTF6P02T3G, NVF6P02T3G Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http //onsemi.com Features Low RDS(on) -10 AMPERES Logic Level Gate Drive -20 VOLTS Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) Avalanche Energy Specified AEC Q101 Qualified and PPAP Capable - NVF6P02T3G S NVF Prefix for Automotive and Other Applications Requiring... See More ⇒

0.3. Size:849K cn vbsemi
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NTF6P02T3G www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Loa... See More ⇒

Detailed specifications: NTD6416ANL , NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , IRF3205 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 .