NTGD4167C MOSFET. Datasheet pdf. Equivalent

Type Designator: NTGD4167C

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 0.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 2.6 A

Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm

Package: TSOP6

NTGD4167C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTGD4167C Datasheet (PDF)

1.1. ntgd4167c.pdf Size:99K _onsemi

NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features • Complementary N-Channel and P-Channel MOSFET http://onsemi.com • Small Size (3 x 3 mm) Dual TSOP-6 Package • Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) • Reduced Gate Charge to Improve Switching Response 90 mW @ 4.5 V 2.6 A N-Ch • Independently Co

3.1. ntgd4169ft1g.pdf Size:130K _update-mosfet

NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com • Fast Switching N-CHANNEL MOSFET • Low Gate Change V(BR)DSS RDS(on) Max ID Max • Low RDS(on) 90 mW @ 4.5 V 2.6 A • Low VF Schottky Diode 30 V • Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A • This is

3.2. ntgd4161pt1g.pdf Size:67K _update-mosfet

NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features • Fast Switching Speed • Low Gate Charge http://onsemi.com • Low RDS(on) • Independently Connected Devices to Provide Design Flexibility V(BR)DSS RDS(on) Max • This is a Pb-Free Device 160 mW @ -10 V Applications -30 V 280 mW @ -4.5 V • Load Switch • Battery Protection • Portable Devices Like

3.3. ntgd4169f ntgd4169ft1g.pdf Size:130K _onsemi