NTGD4167C MOSFET. Datasheet pdf. Equivalent
Type Designator: NTGD4167C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 0.9 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 2.6 A
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TSOP6
NTGD4167C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTGD4167C Datasheet (PDF)
1.1. ntgd4167c.pdf 
Size:99K _onsemi
NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features • Complementary N-Channel and P-Channel MOSFET http://onsemi.com • Small Size (3 x 3 mm) Dual TSOP-6 Package • Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) • Reduced Gate Charge to Improve Switching Response 90 mW @ 4.5 V 2.6 A N-Ch • Independently Co
3.1. ntgd4169f.pdf Size:130K _onsemi
NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com Fast Switching N-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 90 mW @ 4.5 V 2.6 A Low VF Schottky Diode 30 V Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A This is a Pb-Free Devic
3.2. ntgd4161p-d.pdf Size:67K _onsemi
NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features Fast Switching Speed Low Gate Charge http://onsemi.com Low RDS(on) Independently Connected Devices to Provide Design Flexibility V(BR)DSS RDS(on) Max This is a Pb-Free Device 160 mW @ -10 V Applications -30 V 280 mW @ -4.5 V Load Switch Battery Protection Portable Devices Like PDAs, Cellular Phon
Datasheet: NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , BS170 , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P .
