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NTGD4167C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTGD4167C

Тип транзистора: MOSFET

Полярность: NP

Максимальная рассеиваемая мощность (Pd): 0.9 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Максимально допустимый постоянный ток стока (Id): 2.6 A

Сопротивление сток-исток открытого транзистора (Rds): 0.052 Ohm

Тип корпуса: TSOP6

Аналог (замена) для NTGD4167C

 

 

NTGD4167C Datasheet (PDF)

1.1. ntgd4167c.pdf Size:99K _onsemi

NTGD4167C NTGD4167C

NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features • Complementary N-Channel and P-Channel MOSFET http://onsemi.com • Small Size (3 x 3 mm) Dual TSOP-6 Package • Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) • Reduced Gate Charge to Improve Switching Response 90 mW @ 4.5 V 2.6 A N-Ch • Independently Co

3.1. ntgd4169ft1g.pdf Size:130K _update-mosfet

NTGD4167C NTGD4167C

NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com • Fast Switching N-CHANNEL MOSFET • Low Gate Change V(BR)DSS RDS(on) Max ID Max • Low RDS(on) 90 mW @ 4.5 V 2.6 A • Low VF Schottky Diode 30 V • Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A • This is

3.2. ntgd4161pt1g.pdf Size:67K _update-mosfet

NTGD4167C NTGD4167C

NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features • Fast Switching Speed • Low Gate Charge http://onsemi.com • Low RDS(on) • Independently Connected Devices to Provide Design Flexibility V(BR)DSS RDS(on) Max • This is a Pb-Free Device 160 mW @ -10 V Applications -30 V 280 mW @ -4.5 V • Load Switch • Battery Protection • Portable Devices Like

 3.3. ntgd4161p-d.pdf Size:67K _onsemi

NTGD4167C NTGD4167C

NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features Fast Switching Speed Low Gate Charge http://onsemi.com Low RDS(on) Independently Connected Devices to Provide Design Flexibility V(BR)DSS RDS(on) Max This is a Pb-Free Device 160 mW @ -10 V Applications -30 V 280 mW @ -4.5 V Load Switch Battery Protection Portable Devices Like PDAs, Cellular Phon

3.4. ntgd4169f.pdf Size:130K _onsemi

NTGD4167C NTGD4167C

NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com Fast Switching N-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 90 mW @ 4.5 V 2.6 A Low VF Schottky Diode 30 V Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A This is a Pb-Free Devic

Другие MOSFET... NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , BS170 , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P .

 

 
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