2SK956-01 PDF and Equivalents Search

 

2SK956-01 Specs and Replacement


   Type Designator: 2SK956-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3P
 

 2SK956-01 substitution

   - MOSFET ⓘ Cross-Reference Search

 

2SK956-01 datasheet

 0.1. Size:163K  fuji
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2SK956-01

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2SK956-01

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 8.2. Size:203K  inchange semiconductor
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2SK956-01

isc N-Channel MOSFET Transistor 2SK956 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co... See More ⇒

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Detailed specifications: 2SK950 , 2SK951 , 2SK951-01 , 2SK952 , 2SK953 , 2SK954 , 2SK955 , 2SK956 , IRF1405 , 2SK957 , 2SK957-01 , 2SK958 , 2SK959 , 2SK960 , 2SK960-MR , 2SK961 , 2SK962 .

History: AP10G03S

Keywords - 2SK956-01 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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