NTHC5513 Datasheet. Specs and Replacement

Type Designator: NTHC5513  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.9(2.2) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9(13) nS

Cossⓘ - Output Capacitance: 80(95) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08(0.155) Ohm

Package: CHIPFET8

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NTHC5513 datasheet

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NTHC5513

NTHC5513 Power MOSFET 20 V, +3.9 A / -3.0 A, Complementary ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair V(BR)DSS RDS(on) TYP ID MAX ChipFET Package Provides Great Thermal Characteristics Similar to 60 mW @ 4.5 V N-Channel Larger Packages ... See More ⇒

Detailed specifications: NTGS3433, NTGS3441, NTGS3443, NTGS3446, NTGS3455, NTGS4111P, NTGS4141N, NTGS5120P, IRF640N, NTHD3100C, NTHD3101F, NTHD3102C, NTHD3133PF, NTHD4102P, NTHD4502N, NTHD4508N, SRC60R090B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.