All MOSFET. NTHC5513 Datasheet

 

NTHC5513 Datasheet and Replacement


   Type Designator: NTHC5513
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2.9(2.2) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9(13) nS
   Cossⓘ - Output Capacitance: 80(95) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08(0.155) Ohm
   Package: CHIPFET8
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NTHC5513 Datasheet (PDF)

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NTHC5513

NTHC5513Power MOSFET20 V, +3.9 A / -3.0 A,Complementary ChipFETtFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary PairV(BR)DSS RDS(on) TYP ID MAX ChipFET Package Provides Great Thermal Characteristics Similar to60 mW @ 4.5 VN-ChannelLarger Packages

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History: APM3040NDC | CEB840A | NCE20P08J | NTD5806N | SI4618DY | SVT20240NS | ZXMD63N03X

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