NTHC5513 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTHC5513
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 3.9 A
Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm
Package: ChipFET8
NTHC5513 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTHC5513 Datasheet (PDF)
1.1. nthc5513.pdf 
Size:80K _onsemi
NTHC5513 Power MOSFET 20 V, +3.9 A / -3.0 A, Complementary ChipFETt Features Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair V(BR)DSS RDS(on) TYP ID MAX ChipFET Package Provides Great Thermal Characteristics Similar to 60 mW @ 4.5 V N-Channel Larger Packages 3.9 A 20
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