NTHC5513 PDF and Equivalents Search

 

NTHC5513 Specs and Replacement


   Type Designator: NTHC5513
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.9(2.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 9(13) nS
   Cossⓘ - Output Capacitance: 80(95) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08(0.155) Ohm
   Package: CHIPFET8
 

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NTHC5513 datasheet

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NTHC5513

NTHC5513 Power MOSFET 20 V, +3.9 A / -3.0 A, Complementary ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair V(BR)DSS RDS(on) TYP ID MAX ChipFET Package Provides Great Thermal Characteristics Similar to 60 mW @ 4.5 V N-Channel Larger Packages ... See More ⇒

Detailed specifications: NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , AO3400 , NTHD3100C , NTHD3101F , NTHD3102C , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B .

History: APJ10N65P

Keywords - NTHC5513 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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