All MOSFET. NTJD1155L Datasheet

 

NTJD1155L Datasheet and Replacement


   Type Designator: NTJD1155L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: SC88 SOT363
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NTJD1155L Datasheet (PDF)

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NTJD1155L

NTJD1155LPower MOSFET8 V, +1.3 A, High Side Load Switch withLevel-Shift, P-Channel SC-88The NTJD1155L integrates a P and N-Channel MOSFET in a singlepackage. This device is particularly suited for portable electronicequipment where low control signals, low battery voltages and highhttp://onsemi.comhttp://onsemi.comload currents are needed. The P-Channel device is specifically

Datasheet: NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , NTHS4166N , NTHS5404 , NTHS5441T1 , NTHS5443 , SPP20N60C3 , NTJD4001N , NTJD4105C , NTJD4152P , NTJD4158C , NTJD4401N , NTJD5121N , NTJS3151P , NTJS3157N .

History: 3SK16 | 3SK139P | MTE130N20KE3 | WSP9936 | BF245A | 2SK981A | SSF4N60

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