All MOSFET. NTJD1155L Datasheet

 

NTJD1155L MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTJD1155L
   Marking Code: TB*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: SC88 SOT363

 NTJD1155L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTJD1155L Datasheet (PDF)

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 ntjd1155l.pdf

NTJD1155L NTJD1155L

NTJD1155LPower MOSFET8 V, +1.3 A, High Side Load Switch withLevel-Shift, P-Channel SC-88The NTJD1155L integrates a P and N-Channel MOSFET in a singlepackage. This device is particularly suited for portable electronicequipment where low control signals, low battery voltages and highhttp://onsemi.comhttp://onsemi.comload currents are needed. The P-Channel device is specifically

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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