All MOSFET. NTJD4105C Datasheet

 

NTJD4105C Datasheet and Replacement


   Type Designator: NTJD4105C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 227 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm
   Package: SC88 SOT363
 

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NTJD4105C Datasheet (PDF)

 ..1. Size:149K  onsemi
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NTJD4105C

NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performancehttp://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available0.29 W @ 4.5 VN-Ch

 0.1. Size:72K  onsemi
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NTJD4105C

NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Devicehttp://onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm)0.29 W @ 4.5 VN-Ch 20 V 0.63 A Pb-Free Package M

 0.2. Size:2807K  cn tech public
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NTJD4105C

 0.3. Size:2805K  cn tech public
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NTJD4105C

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Datasheet: SRC60R090B , NTHS4101P , NTHS4166N , NTHS5404 , NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , 2N7002 , NTJD4152P , NTJD4158C , NTJD4401N , NTJD5121N , NTJS3151P , NTJS3157N , NTJS4151P , NTJS4405N .

History: WMK10N65D1B | STU20L01A | NTHS5443 | WMJ90N65F2 | IPP032N06N3 | NTJD4001N

Keywords - NTJD4105C MOSFET datasheet

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