NTJD4105C Datasheet and Replacement
Type Designator: NTJD4105C
Marking Code: TC*
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.63 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 3 nC
tr ⓘ - Rise Time: 227 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm
Package: SC88 SOT363
NTJD4105C substitution
NTJD4105C Datasheet (PDF)
ntjd4105c.pdf
NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performancehttp://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available0.29 W @ 4.5 VN-Ch
ntjd4105ct1g.pdf
NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Devicehttp://onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm)0.29 W @ 4.5 VN-Ch 20 V 0.63 A Pb-Free Package M
Datasheet: SRC60R090B , NTHS4101P , NTHS4166N , NTHS5404 , NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , 12N60 , NTJD4152P , NTJD4158C , NTJD4401N , NTJD5121N , NTJS3151P , NTJS3157N , NTJS4151P , NTJS4405N .
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