All MOSFET. NTJD5121N Datasheet

 

NTJD5121N Datasheet and Replacement


   Type Designator: NTJD5121N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.295 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 4.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SC88 SOT363
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NTJD5121N Datasheet (PDF)

 ..1. Size:111K  onsemi
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NTJD5121N

NTJD5121NPower MOSFET60 V, 295 mA, Dual N-Channel with ESDProtection, SC-88Features Low RDS(on)http://onsemi.comhttp://onsemi.com Low Gate Threshold Low Input CapacitanceV(BR)DSS RDS(on) MAX ID Max ESD Protected Gate1.6 W @ 10 V295 mA This is a Pb-Free Device 60 V2.5 W @ 4.5 VApplications Low Side Load SwitchSC-88 (SOT-363) DC-DC Conver

 ..2. Size:69K  onsemi
 ntjd5121n nvjd5121n.pdf pdf_icon

NTJD5121N

NTJD5121N, NVJD5121NPower MOSFET60 V, 295 mA, Dual N-Channel with ESDProtection, SC-88Features Low RDS(on)www.onsemi.comwww.onsemi.com Low Gate Threshold Low Input CapacitanceV(BR)DSS RDS(on) MAX ID Max ESD Protected Gate1.6 W @ 10 V295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V2.5 W @ 4.5 VSite and Control Change Requ

 0.1. Size:1935K  cn tech public
 ntjd5121nt1g.pdf pdf_icon

NTJD5121N

V2.5

Datasheet: NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , NTJD4105C , NTJD4152P , NTJD4158C , NTJD4401N , TK10A60D , NTJS3151P , NTJS3157N , NTJS4151P , NTJS4405N , NTK3043N , NTK3134N , NTK3139P , NTLGD3502N .

History: PMV20XN | PSMN7R0-30MLC | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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