All MOSFET. NTJS3157N Datasheet

 

NTJS3157N Datasheet and Replacement


   Type Designator: NTJS3157N
   Marking Code: T92*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4(min) V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.9 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SC88 SOT363
 

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NTJS3157N Datasheet (PDF)

 ..1. Size:133K  onsemi
 ntjs3157n ntjs3157nt1g ntjs3157nt2 ntjs3157nt4.pdf pdf_icon

NTJS3157N

NTJS3157NTrench Power MOSFET20 V, 4.0 A, Single N-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Lifehttp://onsemi.com Fast Switching for Increased Circuit Efficiency SC-88 Small Outline (2 x 2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-645 mW @ 4.5 V Pb-Free Packages are Available4.0

 7.1. Size:134K  onsemi
 ntjs3151p ntjs3151pt1g ntjs3151pt2.pdf pdf_icon

NTJS3157N

NTJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureshttp://onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V Pb-Free Packages are Available-12 V67 mW @ -2.5 V -3.3 AApplications

 7.2. Size:67K  onsemi
 ntjs3151p nvjs3151p.pdf pdf_icon

NTJS3157N

NTJS3151P, NVJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique

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