NTJS3157N - аналоги, параметры транзистора - Справочник транзисторов

NTJS3157N даташит

..1. Size:133K onsemi
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NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http //onsemi.com Fast Switching for Increased Circuit Efficiency SC-88 Small Outline (2 x 2 mm) for Maximum Circuit Board V(BR)DSS RDS(on) Typ ID Max Utilization, Same as SC-70-6 45 mW @ 4.5 V Pb-Free Packages are Available 4.0

7.1. Size:134K onsemi
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NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, ESD Protected SC-88 Features http //onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection 45 mW @ -4.5 V Pb-Free Packages are Available -12 V 67 mW @ -2.5 V -3.3 A Applications

7.2. Size:67K onsemi
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NTJS3151P, NVJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, ESD Protected SC-88 Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection 45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique

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