All MOSFET. NTK3139P Datasheet

 

NTK3139P Datasheet and Replacement


   Type Designator: NTK3139P
   Marking Code: KD*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 0.66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SOT723
 

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NTK3139P Datasheet (PDF)

 ..1. Size:129K  onsemi
 ntk3139p.pdf pdf_icon

NTK3139P

NTK3139PMOSFET Power, Single,P-Channel with ESDProtection, SOT-723-20 V, -780 mAwww.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID Max P-channel Switch with Low RDS(on)0.38 W @ -4.5 V -780 mA 44% Smaller Footprint and 38% Thinner than SC-890.52 W @ -2.5 V -660 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating-20 V0.70 W @ -1.8 V -100 mA Operated at

 0.1. Size:59K  onsemi
 ntk3139p-d ntk3139pt1g.pdf pdf_icon

NTK3139P

NTK3139PPower MOSFET-20 V, -780 mA, Single P-Channel withESD Protection, SOT-723Featureshttp://onsemi.com P-channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels Allowing 1.5 V RDS(on) Rating 0.38 W @ -4.5 V -780 mA Operated at Low Logic Level Gate Drive0.52 W @ -2.5 V -660 mA-20 V

 0.2. Size:1967K  cn tech public
 tpntk3139pt1g.pdf pdf_icon

NTK3139P

 0.3. Size:1861K  cn tech public
 pntk3139pt5g.pdf pdf_icon

NTK3139P

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Keywords - NTK3139P MOSFET datasheet

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