All MOSFET. NTLGD3502N Datasheet

 

NTLGD3502N Datasheet and Replacement


   Type Designator: NTLGD3502N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17.5 nS
   Cossⓘ - Output Capacitance: 138 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: DFN6
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NTLGD3502N Datasheet (PDF)

 0.1. Size:115K  onsemi
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NTLGD3502N

NTLGD3502NPower MOSFET20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm PackageFeatures Exposed Drain Package Excellent Thermal Resistance for Superior Heat Dissipation Low Threshold Levelshttp://onsemi.com Low Profile (

Datasheet: NTJD5121N , NTJS3151P , NTJS3157N , NTJS4151P , NTJS4405N , NTK3043N , NTK3134N , NTK3139P , 5N60 , NTLGF3402P , NTLJD3115P , NTLJD3119C , NTLJD4116N , NTLJF3117P , NTLJF4156N , NTLJS2103P , NTLJS3113P .

History: SWI110R06VT | BRCS200P03DP | IRFB3004GPBF | IRFBF20 | CED4301 | LKK47-06C5 | TSM4424CS

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