NTLGD3502N PDF and Equivalents Search

 

NTLGD3502N Specs and Replacement

Type Designator: NTLGD3502N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.5 nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: DFN6

NTLGD3502N substitution

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NTLGD3502N datasheet

 0.1. Size:115K  onsemi
 ntlgd3502n-d.pdf pdf_icon

NTLGD3502N

NTLGD3502N Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package Features Exposed Drain Package Excellent Thermal Resistance for Superior Heat Dissipation Low Threshold Levels http //onsemi.com Low Profile (... See More ⇒

Detailed specifications: NTJD5121N, NTJS3151P, NTJS3157N, NTJS4151P, NTJS4405N, NTK3043N, NTK3134N, NTK3139P, AON7410, NTLGF3402P, NTLJD3115P, NTLJD3119C, NTLJD4116N, NTLJF3117P, NTLJF4156N, NTLJS2103P, NTLJS3113P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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