QN3109M6N Datasheet. Specs and Replacement

Type Designator: QN3109M6N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43.8 nS

Cossⓘ - Output Capacitance: 1941 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: PRPAK5X6

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QN3109M6N datasheet

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QN3109M6N

QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee... See More ⇒

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QN3109M6N

QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet ... See More ⇒

 9.2. Size:312K  1
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QN3109M6N

QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet... See More ⇒

Detailed specifications: NTLJD4116N, NTLJF3117P, NTLJF4156N, NTLJS2103P, NTLJS3113P, NTLJS4114N, QM3098M6, NTLUF4189NZ, STP80NF70, S60N12R, NTMD3P03, NTMD4184PF, NTMD4820N, NTMD4840N, NTMD4884NF, NTMD5836NL, NTMD5838NL

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