TK2R9E10PL PDF and Equivalents Search

 

TK2R9E10PL Specs and Replacement

Type Designator: TK2R9E10PL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 306 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO220

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TK2R9E10PL datasheet

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TK2R9E10PL

TK2R9E10PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK2R9E10PL TK2R9E10PL TK2R9E10PL TK2R9E10PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 48 nC (typ.) (3) Small out... See More ⇒

Detailed specifications: NTMFS4937N, NTMFS4939N, NTMFS4941N, NTMFS4943N, NTMFS5830NL, NTMFS5832NL, NTMFS5834NL, NTMFS5844NL, IRF540, NTMS4176P, NTMS4177P, NTMS4503N, NTMS4800N, NTMS4801N, NTMS4802N, NTMS4807N, NTMS4816N

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