TK2R9E10PL Specs and Replacement
Type Designator: TK2R9E10PL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 306 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO220
TK2R9E10PL substitution
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TK2R9E10PL datasheet
tk2r9e10pl.pdf
TK2R9E10PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK2R9E10PL TK2R9E10PL TK2R9E10PL TK2R9E10PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 48 nC (typ.) (3) Small out... See More ⇒
Detailed specifications: NTMFS4937N, NTMFS4939N, NTMFS4941N, NTMFS4943N, NTMFS5830NL, NTMFS5832NL, NTMFS5834NL, NTMFS5844NL, IRF540, NTMS4176P, NTMS4177P, NTMS4503N, NTMS4800N, NTMS4801N, NTMS4802N, NTMS4807N, NTMS4816N
Keywords - TK2R9E10PL MOSFET specs
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History: HNM2302ALB
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