All MOSFET. NTMS7N03R2 Datasheet

 

NTMS7N03R2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMS7N03R2
   Marking Code: E7N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOIC8

 NTMS7N03R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMS7N03R2 Datasheet (PDF)

 ..1. Size:93K  onsemi
 ntms7n03r2 ntms7n03r2g.pdf

NTMS7N03R2 NTMS7N03R2

NTMS7N03R2Power MOSFET7 Amps, 30 VoltsN-Channel SOIC-8Featureshttp://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life7 AMPERES Logic Level Gate Drive30 VOLTS Miniature SOIC-8 Surface Mount PackageRDS(on) = 23 mW Avalanche Energy Specified IDSS Specified at Elevated TemperatureN-Channel Pb-Free Package is AvailableDTyp

 0.1. Size:95K  onsemi
 ntms7n03r2g.pdf

NTMS7N03R2 NTMS7N03R2

NTMS7N03R2GPower MOSFET7 Amps, 30 Volts, N-Channel SOIC-8Features Ultra Low RDS(on)www.onsemi.com Higher Efficiency Extending Battery Life7 AMPERES Logic Level Gate Drive Miniature SOIC-8 Surface Mount Package30 VOLTS Avalanche Energy SpecifiedRDS(on) = 23 mW IDSS Specified at Elevated Temperature This is a Pb-Free DeviceN-ChannelDTypical A

Datasheet: NTMS4916N , NTMS4917N , NTMS4920N , NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , 7N65 , NTNUS3171PZ , NTP2955 , NTP5404N , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN .

History: MMDF1N05E

 

 
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