NTMS7N03R2 Datasheet and Replacement
Type Designator: NTMS7N03R2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOIC8
NTMS7N03R2 substitution
NTMS7N03R2 Datasheet (PDF)
ntms7n03r2 ntms7n03r2g.pdf

NTMS7N03R2Power MOSFET7 Amps, 30 VoltsN-Channel SOIC-8Featureshttp://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life7 AMPERES Logic Level Gate Drive30 VOLTS Miniature SOIC-8 Surface Mount PackageRDS(on) = 23 mW Avalanche Energy Specified IDSS Specified at Elevated TemperatureN-Channel Pb-Free Package is AvailableDTyp
ntms7n03r2g.pdf

NTMS7N03R2GPower MOSFET7 Amps, 30 Volts, N-Channel SOIC-8Features Ultra Low RDS(on)www.onsemi.com Higher Efficiency Extending Battery Life7 AMPERES Logic Level Gate Drive Miniature SOIC-8 Surface Mount Package30 VOLTS Avalanche Energy SpecifiedRDS(on) = 23 mW IDSS Specified at Elevated Temperature This is a Pb-Free DeviceN-ChannelDTypical A
Datasheet: NTMS4916N , NTMS4917N , NTMS4920N , NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , IRF630 , NTNUS3171PZ , NTP2955 , NTP5404N , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN .
Keywords - NTMS7N03R2 MOSFET datasheet
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History: AP9974 | SMK1820F



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