NTTD4401F PDF and Equivalents Search

 

NTTD4401F Specs and Replacement

Type Designator: NTTD4401F

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: MICRO8

NTTD4401F substitution

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NTTD4401F datasheet

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NTTD4401F

NTTD4401F FETKYt Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package http //onsemi.com The FETKY product family incorporates low RDS(on), true logic level MOSFET PRODUCT SUMMARY MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) Typ ID... See More ⇒

Detailed specifications: NTR4501N, NTR4502P, NTR4503N, NTS2101P, NTS4001N, NTS4101P, NTS4173P, NTS4409NT1G, IRF530, NTTFS4821N, NTTFS4823N, NTTFS4824N, NTTFS4928N, NTTFS4929N, NTTFS4930N, NTTFS4932N, NTTFS4937N

Keywords - NTTD4401F MOSFET specs

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