NTTD4401F Datasheet and Replacement
Type Designator: NTTD4401F
Marking Code: BG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICRO8
NTTD4401F substitution
NTTD4401F Datasheet (PDF)
..1. Size:92K onsemi
nttd4401f nttd4401fr2.pdf
nttd4401f nttd4401fr2.pdf
NTTD4401FFETKYt Power MOSFETand Schottky Diode-20 V, -3.3 A P-Channel with 20 V,1.0 A Schottky Diode, Micro8t Packagehttp://onsemi.comThe FETKY product family incorporates low RDS(on), true logic levelMOSFET PRODUCT SUMMARYMOSFETs packaged with industry leading, low forward drop, lowleakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) TypID
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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