NTUD3169CZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTUD3169CZ
Marking Code: 2*
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.22(0.2)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25.5(46)
nS
Cossⓘ -
Output Capacitance: 3.6(3.8)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5(5)
Ohm
Package:
SOT963
NTUD3169CZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTUD3169CZ
Datasheet (PDF)
..1. Size:118K onsemi
ntud3169cz.pdf 
NTUD3169CZSmall Signal MOSFET20 V, 220 mA / -200 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mmV(BR)DSS RDS(on) Max ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V Ultra Thin Profile (
8.1. Size:109K onsemi
ntud3174nz.pdf
NTUD3174NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V20 V 0.22 A Ultra Thin Profile (
8.2. Size:114K onsemi
ntud3127c-d.pdf
NTUD3127CSmall Signal MOSFET20 V, 200 mA / -180 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device 1.5 V Gate Voltage RatingV(BR)DSS RDS(on) Max ID Max Ultra Thin Profile (
8.3. Size:81K onsemi
ntud3128n.pdf
NTUD3128NSmall Signal MOSFET20 V, 200 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.0 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.2 A4.0 W @ 2.5 V Ultra Thin Profile (
8.4. Size:101K onsemi
ntud3170nz.pdf
NTUD3170NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.22 A2.0 W @ 2.5 V Ultra Thin Profile (
8.5. Size:81K onsemi
ntud3129p.pdf
NTUD3129PSmall Signal MOSFET-20 V, -180 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5V Gate Voltage Rating7.0 W @ -2.5 V-20 V -0.18 A Ultra Thin Profile (
8.6. Size:103K onsemi
ntud3171pz.pdf
NTUD3171PZSmall Signal MOSFET-20 V, -200 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5 V Gate Voltage Rating6.0 W @ -2.5 V Ultra Thin Profile (
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