Справочник MOSFET. NTUD3169CZ

 

NTUD3169CZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTUD3169CZ
   Маркировка: 2*
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.22(0.2) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 25.5(46) ns
   Cossⓘ - Выходная емкость: 3.6(3.8) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5(5) Ohm
   Тип корпуса: SOT963

 Аналог (замена) для NTUD3169CZ

 

 

NTUD3169CZ Datasheet (PDF)

 ..1. Size:118K  onsemi
 ntud3169cz.pdf

NTUD3169CZ NTUD3169CZ

NTUD3169CZSmall Signal MOSFET20 V, 220 mA / -200 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mmV(BR)DSS RDS(on) Max ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V Ultra Thin Profile (

 8.1. Size:109K  onsemi
 ntud3174nz.pdf

NTUD3169CZ NTUD3169CZ

NTUD3174NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating2.0 W @ 2.5 V20 V 0.22 A Ultra Thin Profile (

 8.2. Size:114K  onsemi
 ntud3127c-d.pdf

NTUD3169CZ NTUD3169CZ

NTUD3127CSmall Signal MOSFET20 V, 200 mA / -180 mA, Complementary,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Complementary MOSFET Device 1.5 V Gate Voltage RatingV(BR)DSS RDS(on) Max ID Max Ultra Thin Profile (

 8.3. Size:81K  onsemi
 ntud3128n.pdf

NTUD3169CZ NTUD3169CZ

NTUD3128NSmall Signal MOSFET20 V, 200 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.0 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.2 A4.0 W @ 2.5 V Ultra Thin Profile (

 8.4. Size:101K  onsemi
 ntud3170nz.pdf

NTUD3169CZ NTUD3169CZ

NTUD3170NZSmall Signal MOSFET20 V, 220 mA, Dual N-Channel, 1.0 mm x1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual N-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage1.5 W @ 4.5 V 1.5 V Gate Voltage Rating20 V 0.22 A2.0 W @ 2.5 V Ultra Thin Profile (

 8.5. Size:81K  onsemi
 ntud3129p.pdf

NTUD3169CZ NTUD3169CZ

NTUD3129PSmall Signal MOSFET-20 V, -180 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5V Gate Voltage Rating7.0 W @ -2.5 V-20 V -0.18 A Ultra Thin Profile (

 8.6. Size:103K  onsemi
 ntud3171pz.pdf

NTUD3169CZ NTUD3169CZ

NTUD3171PZSmall Signal MOSFET-20 V, -200 mA, Dual P-Channel,1.0 x 1.0 mm SOT-963 PackageFeatures http://onsemi.com Dual P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 1.0 mmV(BR)DSS RDS(ON) MAX ID MaxPackage5.0 W @ -4.5 V 1.5 V Gate Voltage Rating6.0 W @ -2.5 V Ultra Thin Profile (

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