NTZD5110N PDF and Equivalents Search

 

NTZD5110N Specs and Replacement

Type Designator: NTZD5110N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.294 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 4.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: SOT563

NTZD5110N substitution

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NTZD5110N datasheet

 ..1. Size:103K  onsemi
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NTZD5110N

NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection, SOT-563 Features Low RDS(on) Improving System Efficiency http //onsemi.com Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm V(BR)DSS RDS(on) MAX ID Max These are Pb-Free Devices 1.6 W @ 10 V 60 310 mA 2.5 W @ 4.5 V Applications Load/Power Switches Dri... See More ⇒

Detailed specifications: NTTFS5820NL, NTTFS5826NL, NTUD3127C, NTUD3169CZ, NTUD3170NZ, NTZD3152P, NTZD3154N, NTZD3155C, IRF2807, NTZS3151P, FDB075N15AF085, NUS3116MT, NUS5530MN, NUS5531MT, NVD5803N, NVD5862N, NVD5863NL

Keywords - NTZD5110N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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