All MOSFET. NTZD5110N Datasheet

 

NTZD5110N Datasheet and Replacement


   Type Designator: NTZD5110N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.294 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 4.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SOT563
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NTZD5110N Datasheet (PDF)

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NTZD5110N

NTZD5110NSmall Signal MOSFET60 V, 310 mA, Dual N-Channel with ESD Protection, SOT-563Features Low RDS(on) Improving System Efficiencyhttp://onsemi.com Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm V(BR)DSS RDS(on) MAX ID Max These are Pb-Free Devices1.6 W @ 10 V60 310 mA2.5 W @ 4.5 VApplications Load/Power Switches Dri

Datasheet: NTTFS5820NL , NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ , NTZD3152P , NTZD3154N , NTZD3155C , IRF9540N , NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - NTZD5110N MOSFET datasheet

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