All MOSFET. NTZD5110N Datasheet

 

NTZD5110N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTZD5110N
   Marking Code: S7*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.294 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.7 nC
   trⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 4.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SOT563

 NTZD5110N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTZD5110N Datasheet (PDF)

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 ntzd5110n.pdf

NTZD5110N NTZD5110N

NTZD5110NSmall Signal MOSFET60 V, 310 mA, Dual N-Channel with ESD Protection, SOT-563Features Low RDS(on) Improving System Efficiencyhttp://onsemi.com Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm V(BR)DSS RDS(on) MAX ID Max These are Pb-Free Devices1.6 W @ 10 V60 310 mA2.5 W @ 4.5 VApplications Load/Power Switches Dri

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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