NTZS3151P PDF and Equivalents Search

 

NTZS3151P Specs and Replacement

Type Designator: NTZS3151P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT563

NTZS3151P substitution

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NTZS3151P datasheet

 ..1. Size:130K  onsemi
 ntzs3151p ntzs3151pt1g.pdf pdf_icon

NTZS3151P

NTZS3151P Small Signal MOSFET -20 V, -950 mA, P-Channel SOT-563 Features Low RDS(on) Improving System Efficiency http //onsemi.com Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices 120 mW @ -4.5 V -20 V 144 mW @ -2.5 V -950 mA Applications 195 mW @ -1.8 V Load/Power Switches P-Channel MOSFET Battery Man... See More ⇒

 ..2. Size:96K  onsemi
 ntzs3151p.pdf pdf_icon

NTZS3151P

NTZS3151P Small Signal MOSFET -20 V, -950 mA, P-Channel SOT-563 Features Low RDS(on) Improving System Efficiency http //onsemi.com Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 120 mW @ -4.5 V Compliant -20 V 144 mW @ -2.5 V -950 mA 195 mW @ -1.8 V Applications P-Channel MO... See More ⇒

Detailed specifications: NTTFS5826NL, NTUD3127C, NTUD3169CZ, NTUD3170NZ, NTZD3152P, NTZD3154N, NTZD3155C, NTZD5110N, STF13NM60N, FDB075N15AF085, NUS3116MT, NUS5530MN, NUS5531MT, NVD5803N, NVD5862N, NVD5863NL, NVD5865NL

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