NTZS3151P Datasheet and Replacement
Type Designator: NTZS3151P
Marking Code: TX*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 0.86 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 5.6 nC
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT563
NTZS3151P substitution
NTZS3151P Datasheet (PDF)
ntzs3151p ntzs3151pt1g.pdf
NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices 120 mW @ -4.5 V-20 V 144 mW @ -2.5 V -950 mAApplications195 mW @ -1.8 V Load/Power SwitchesP-Channel MOSFET Battery Man
ntzs3151p.pdf
NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 120 mW @ -4.5 VCompliant -20 V 144 mW @ -2.5 V -950 mA195 mW @ -1.8 VApplicationsP-Channel MO
Datasheet: NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ , NTZD3152P , NTZD3154N , NTZD3155C , NTZD5110N , AON7403 , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL , NVD5865NL .
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