WPB4002 Datasheet and Replacement
Type Designator: WPB4002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO3PB
WPB4002 substitution
WPB4002 Datasheet (PDF)
wpb4002.pdf
WPB4002Ordering number : ENA1769SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceWPB4002ApplicationsFeatures Reverse recovery time trr=115ns (typ) ON-resistance RDS(on)=0.28 (typ) Input capacitance Ciss=2200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Rating
Datasheet: SFT1446 , SFT1450 , SMP3003 , TF202THC , TF252 , TF252TH , TF256 , TF256TH , 7N65 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , FMD40-06KC .
History: IRF6898MTRPBF
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History: IRF6898MTRPBF
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