FMD21-05QC MOSFET. Datasheet pdf. Equivalent
Type Designator: FMD21-05QC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 15 nS
Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm
Package: ISOPLUSI4
FMD21-05QC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMD21-05QC Datasheet (PDF)
0.1. fdm21-05qc fmd21-05qc fdm21-05qc.pdf 
Size:49K _ixys
FMD 21-05QCFDM 21-05QCID25 = 21 AQ-ClassVDSS = 500 VPower MOSFETsRDSon typ. = 190 mChopper Topologiesin ISOPLUS i4-PACTMFMD FDM3 3Preliminary data5441152 2Features MOSFET Q-Class Power MOSFET technologySymbol Conditions Maximum Ratings - low RDSon- low gate charge for high frequencyVDSS TVJ = 25C to 150C 500 Voperat
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