IXFA4N100P MOSFET Datasheet: N-Ch, 1000V, 4A. Full specification with pinout and replacement list

IXFA4N100P Specs and Replacement

Type Designator: IXFA4N100P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: TO263

IXFA4N100P substitution

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IXFA4N100P datasheet

5.1. Size:142K ixys
ixfa4n100q-trl.pdf pdf_icon

HiperFETTM VDSS = 1000V IXFA4N100Q Power MOSFETs ID25 = 4A IXFP4N100Q Q-Class RDS(on) 3.0 N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V TO-220AB (IXFP) VGSS Continuous 20 V VGS... See More ⇒

8.1. Size:163K ixys
ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf pdf_icon

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RG... See More ⇒

Detailed specifications: IXFA130N10T2, IXFA14N60P, IXFA16N50P, IXFA180N10T2, IXFA230N075T2, IXFA230N075T2-7, IXFA3N120, IXFA3N80, IRLB3034, IXFA4N100Q, IXFA5N100P, IXFA6N120P, IXFA76N15T2, IXFA7N100P, IXFA7N80P, IXFB100N50P, IXFB100N50Q3