IXFB210N20P PDF and Equivalents Search

 

IXFB210N20P Specs and Replacement

Type Designator: IXFB210N20P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: PLUS264

IXFB210N20P substitution

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IXFB210N20P datasheet

 6.1. Size:140K  ixys
 ixfb210n30p3.pdf pdf_icon

IXFB210N20P

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFB210N30P3 Power MOSFET ID25 = 210A RDS(on) 14.5m trr 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C, RGS = 1M 300 V D ... See More ⇒

Detailed specifications: IXFA7N100P, IXFA7N80P, IXFB100N50P, IXFB100N50Q3, IXFB110N60P3, IXFB120N50P2, IXFB132N50P3, IXFB170N30P, IRF730, IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P

Keywords - IXFB210N20P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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