All MOSFET. IXFB210N20P Datasheet

 

IXFB210N20P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFB210N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 255 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PLUS264

 IXFB210N20P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFB210N20P Datasheet (PDF)

 6.1. Size:140K  ixys
 ixfb210n30p3.pdf

IXFB210N20P IXFB210N20P

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFB210N30P3Power MOSFET ID25 = 210A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierPLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C, RGS = 1M 300 VD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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