All MOSFET. IXFB210N20P Datasheet

 

IXFB210N20P Datasheet and Replacement


   Type Designator: IXFB210N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PLUS264
 

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IXFB210N20P Datasheet (PDF)

 6.1. Size:140K  ixys
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IXFB210N20P

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFB210N30P3Power MOSFET ID25 = 210A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierPLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C, RGS = 1M 300 VD

Datasheet: IXFA7N100P , IXFA7N80P , IXFB100N50P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 , IXFB170N30P , BS170 , IXFB300N10P , IXFB30N120P , IXFB38N100Q2 , IXFB40N110P , IXFB44N100P , IXFB44N100Q3 , IXFB50N80Q2 , IXFB52N90P .

History: AP9973GJ | STP1N105K3 | STT3434N | IRFH5303 | AP3P028LM | 2SK3687-01MR | STD10PF06T4

Keywords - IXFB210N20P MOSFET datasheet

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