IXFB38N100Q2 Specs and Replacement
Type Designator: IXFB38N100Q2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: PLUS264
IXFB38N100Q2 substitution
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IXFB38N100Q2 datasheet
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Detailed specifications: IXFB100N50Q3, IXFB110N60P3, IXFB120N50P2, IXFB132N50P3, IXFB170N30P, IXFB210N20P, IXFB300N10P, IXFB30N120P, IRF740, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2
Keywords - IXFB38N100Q2 MOSFET specs
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History: LSC60R180HT | STT4443 | WTC2306 | CS540AR | TPH8R008NH
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