IXFB44N100Q3 Spec and Replacement
Type Designator: IXFB44N100Q3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 300 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: PLUS264
IXFB44N100Q3 substitution
IXFB44N100Q3 Specs
ixfb40n110q3.pdf
Preliminary Technical Information HiperFETTM VDSS = 1100V IXFB40N110Q3 Power MOSFET ID25 = 40A Q3-Class RDS(on) 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1100 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1100 V D S VGSS Continuous 30 V Tab VGS... See More ⇒
Detailed specifications: IXFB132N50P3 , IXFB170N30P , IXFB210N20P , IXFB300N10P , IXFB30N120P , IXFB38N100Q2 , IXFB40N110P , IXFB44N100P , IRF540N , IXFB50N80Q2 , IXFB52N90P , IXFB60N80P , IXFB62N80Q3 , IXFB70N60Q2 , IXFB72N55Q2 , IXFB80N50Q2 , IXFB82N60P .
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