IXFB44N100Q3 Datasheet. Specs and Replacement

Type Designator: IXFB44N100Q3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: PLUS264

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IXFB44N100Q3 datasheet

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IXFB44N100Q3

Preliminary Technical Information HiperFETTM VDSS = 1100V IXFB40N110Q3 Power MOSFET ID25 = 40A Q3-Class RDS(on) 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1100 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1100 V D S VGSS Continuous 30 V Tab VGS... See More ⇒

Detailed specifications: IXFB132N50P3, IXFB170N30P, IXFB210N20P, IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IRF1404, IXFB50N80Q2, IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P

Keywords - IXFB44N100Q3 MOSFET specs

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