All MOSFET. IXFB44N100Q3 Datasheet

 

IXFB44N100Q3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFB44N100Q3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1560 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 6.5 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 264 nC

Rise Time (tr): 300 nS

Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm

Package: PLUS264

IXFB44N100Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFB44N100Q3 Datasheet (PDF)

5.1. ixfb40n110q3.pdf Size:137K _ixys

IXFB44N100Q3
IXFB44N100Q3

Preliminary Technical Information HiperFETTM VDSS = 1100V IXFB40N110Q3 Power MOSFET ID25 = 40A   Q3-Class RDS(on)  260m       N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1100 V G VDGR TJ = 25C to 150C, RGS = 1M 1100 V D S VGSS Continuous 30 V Tab VGS

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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