IXFB50N80Q2 MOSFET Datasheet: N-Ch, 800V, 50A. Full specification with pinout and replacement list

IXFB50N80Q2 Specs and Replacement

Type Designator: IXFB50N80Q2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: PLUS264

IXFB50N80Q2 substitution

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IXFB50N80Q2 datasheet

..1. Size:558K ixys
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HiPerFETTM IXFB 50N80Q2 VDSS = 800 V Power MOSFETs ID25 = 50 A RDS(on)= 0.15 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg trr 300 ns High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V G (TAB) D VGS Conti... See More ⇒

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VDSS = 900V IXFB52N90P PolarTM Power MOSFET ID25 = 52A HiPerFETTM RDS(on) 160m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M 900 V VGSS Continuous 30 V G (TAB) D VGSM ... See More ⇒

Detailed specifications: IXFB170N30P, IXFB210N20P, IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IRF540, IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3