All MOSFET. IXFB70N60Q2 Datasheet

 

IXFB70N60Q2 Datasheet and Replacement


   Type Designator: IXFB70N60Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 265 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: PLUS264
 

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IXFB70N60Q2 Datasheet (PDF)

 9.1. Size:551K  ixys
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IXFB70N60Q2

HiPerFETTMVDSS = 550 VIXFB 72N55Q2Power MOSFETsID25 = 72 AQ-ClassRDS(on)= 72 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetPLUS 264TM (IXFB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 550 VVDGR TJ = 25C to 150C; RGS = 1 M

Datasheet: IXFB38N100Q2 , IXFB40N110P , IXFB44N100P , IXFB44N100Q3 , IXFB50N80Q2 , IXFB52N90P , IXFB60N80P , IXFB62N80Q3 , IRF640 , IXFB72N55Q2 , IXFB80N50Q2 , IXFB82N60P , IXFB82N60Q3 , IXFC10N80P , IXFC110N10P , IXFC12N80P , IXFC13N50 .

Keywords - IXFB70N60Q2 MOSFET datasheet

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