IXFB70N60Q2 Specs and Replacement
Type Designator: IXFB70N60Q2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: PLUS264
IXFB70N60Q2 substitution
- MOSFET ⓘ Cross-Reference Search
IXFB70N60Q2 datasheet
ixfb72n55q2.pdf
HiPerFETTM VDSS = 550 V IXFB 72N55Q2 Power MOSFETs ID25 = 72 A Q-Class RDS(on)= 72 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 550 V VDGR TJ = 25 C to 150 C; RGS = 1 M... See More ⇒
Detailed specifications: IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IRF640, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IXFC10N80P, IXFC110N10P, IXFC12N80P, IXFC13N50
Keywords - IXFB70N60Q2 MOSFET specs
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History: MIC94053
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