All MOSFET. IXFB82N60Q3 Datasheet

 

IXFB82N60Q3 Datasheet and Replacement


   Type Designator: IXFB82N60Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: PLUS264
 

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IXFB82N60Q3 Datasheet (PDF)

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IXFB82N60Q3

IXFB 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 75 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 V(TAB)G

Datasheet: IXFB50N80Q2 , IXFB52N90P , IXFB60N80P , IXFB62N80Q3 , IXFB70N60Q2 , IXFB72N55Q2 , IXFB80N50Q2 , IXFB82N60P , IRF630 , IXFC10N80P , IXFC110N10P , IXFC12N80P , IXFC13N50 , IXFC14N60P , IXFC14N80P , IXFC15N80Q , IXFC16N50P .

History: IPD60R380P6 | 2SK1916-01R

Keywords - IXFB82N60Q3 MOSFET datasheet

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