All MOSFET. IXFB82N60Q3 Datasheet

 

IXFB82N60Q3 Datasheet and Replacement


   Type Designator: IXFB82N60Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: PLUS264
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IXFB82N60Q3 Datasheet (PDF)

 5.1. Size:101K  ixys
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IXFB82N60Q3

IXFB 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 75 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 V(TAB)G

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MEE4298T | MDS5652URH | 2SJ550 | WSP6039 | ME7632-G | RS1E300GN | STK14N05

Keywords - IXFB82N60Q3 MOSFET datasheet

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