All MOSFET. IXFB82N60Q3 Datasheet

 

IXFB82N60Q3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFB82N60Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 275 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: PLUS264

 IXFB82N60Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFB82N60Q3 Datasheet (PDF)

 5.1. Size:101K  ixys
 ixfb82n60p.pdf

IXFB82N60Q3 IXFB82N60Q3

IXFB 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 75 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 V(TAB)G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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