IXFB82N60Q3 Specs and Replacement
Type Designator: IXFB82N60Q3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: PLUS264
IXFB82N60Q3 substitution
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IXFB82N60Q3 datasheet
ixfb82n60p.pdf
IXFB 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET RDS(on) 75 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V (TAB) G... See More ⇒
Detailed specifications: IXFB50N80Q2, IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IRF640N, IXFC10N80P, IXFC110N10P, IXFC12N80P, IXFC13N50, IXFC14N60P, IXFC14N80P, IXFC15N80Q, IXFC16N50P
Keywords - IXFB82N60Q3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK1167 | SI2306DS | AP9468GS
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