IXFC10N80P Specs and Replacement
Type Designator: IXFC10N80P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Id| ⓘ - Maximum Drain Current: 5 A
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: ISOPLUS220
IXFC10N80P substitution
- MOSFET ⓘ Cross-Reference Search
IXFC10N80P datasheet
ixfc14n60p.pdf
IXFC 14N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 8 A Power MOSFET RDS(on) 630 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ... See More ⇒
ixfc16n50p.pdf
IXFC 16N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 10 A Power MOSFET RDS(on) 450 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated ISOPLUS220TM (IXFC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 500 V VDGR T... See More ⇒
ixfc110n10p.pdf
IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 17 m ISOPLUS220TM trr 150 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ... See More ⇒
Detailed specifications: IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IRFP260N, IXFC110N10P, IXFC12N80P, IXFC13N50, IXFC14N60P, IXFC14N80P, IXFC15N80Q, IXFC16N50P, IXFC16N80P
Keywords - IXFC10N80P MOSFET specs
IXFC10N80P cross reference
IXFC10N80P equivalent finder
IXFC10N80P pdf lookup
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IXFC10N80P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: S40N09R | SED8830N | S15H12S
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