IXFC36N50P PDF and Equivalents Search

 

IXFC36N50P Specs and Replacement

Type Designator: IXFC36N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: ISOPLUS220

IXFC36N50P substitution

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IXFC36N50P datasheet

 ..1. Size:248K  ixys
 ixfc36n50p ixfr36n50p.pdf pdf_icon

IXFC36N50P

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET RDS(on) 190 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ ... See More ⇒

 9.1. Size:135K  ixys
 ixfc30n60p ixfr30n60p.pdf pdf_icon

IXFC36N50P

IXFC 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFR 30N60P ID25 = 15 A Power MOSFET RDS(on) 250 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to... See More ⇒

Detailed specifications: IXFC16N50P, IXFC16N80P, IXFC20N80P, IXFC22N60P, IXFC24N50, IXFC26N50, IXFC26N50P, IXFC30N60P, 2SK3878, IXFC52N30P, IXFC60N20, IXFC74N20P, IXFC80N085, IXFC96N15P, IXFE180N10, IXFE180N20, IXFE23N100

Keywords - IXFC36N50P MOSFET specs

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