IXFC80N085 MOSFET Datasheet: N-Ch, 85V, 80A. Full specification with pinout and replacement list

IXFC80N085 Specs and Replacement

Type Designator: IXFC80N085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: ISOPLUS220

IXFC80N085 substitution

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IXFC80N085 datasheet

5.1. Size:525K ixys
ixfc80n08.pdf pdf_icon

ADVANCE TECHNICAL INFORMATION VDSS ID25 RDS(on) HiPerFETTM MOSFET IXFC 80N08 80 V 80 A 11 m ISOPLUS220TM 85 V 80 A 11 m IXFC 80N085 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings ISOPLUS220TM VDSS TJ = 25 C to 150 C 80N08 80 V VDGR TJ = 25 C to ... See More ⇒

7.1. Size:69K ixys
ixfc80n10.pdf pdf_icon

ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS = 100 V ISOPLUS220TM ID25 = 80 A Electrically Isolated Back Surface RDS(on) = 12.5 m trr 200 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 220TM VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; ... See More ⇒

Detailed specifications: IXFC24N50, IXFC26N50, IXFC26N50P, IXFC30N60P, IXFC36N50P, IXFC52N30P, IXFC60N20, IXFC74N20P, IRF4905, IXFC96N15P, IXFE180N10, IXFE180N20, IXFE23N100, IXFE24N100, IXFE39N90, IXFE44N50Q, IXFE44N50QD2