2SK998
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK998
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.35
V
|Id|ⓘ - Maximum Drain Current: 0.035
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 300
Ohm
Package:
TO92
2SK998
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK998
Datasheet (PDF)
9.1. Size:2765K 1
2sk992.pdf 
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9.3. Size:2599K 1
2sk991.pdf
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9.4. Size:264K 1
2sk995.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
9.5. Size:200K inchange semiconductor
2sk996.pdf
isc N-Channel MOSFET Transistor 2SK996DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-Source Voltage (V =0) 600
9.6. Size:196K inchange semiconductor
2sk995.pdf
isc N-Channel MOSFET Transistor 2SK995DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =550V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-S
Datasheet: 2SK990
, 2SK991
, 2SK992
, 2SK993
, 2SK994
, 2SK995
, 2SK996
, 2SK997
, IRF3710
, 3N124
, 3N125
, 3N126
, 3N140
, 3N141
, 3N159
, 3N163
, 3N164
.
