Справочник MOSFET. 2SK998

 

2SK998 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK998
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.035 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 300 Ohm
   Тип корпуса: TO92

 Аналог (замена) для 2SK998

 

 

2SK998 Datasheet (PDF)

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2sk992.pdf

2SK998
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2SK998

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2SK998

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2sk995.pdf

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2SK998

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

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2SK998

isc N-Channel MOSFET Transistor 2SK996DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-Source Voltage (V =0) 600

 9.6. Size:196K  inchange semiconductor
2sk995.pdf

2SK998
2SK998

isc N-Channel MOSFET Transistor 2SK995DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =550V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-S

Другие MOSFET... 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 , 2SK995 , 2SK996 , 2SK997 , IRF3710 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , 3N163 , 3N164 .

 

 
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