IXFH102N15T MOSFET Datasheet: N-Ch, 150V, 102A. Full specification with pinout and replacement list

IXFH102N15T Specs and Replacement

Type Designator: IXFH102N15T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 455 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 102 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO247

IXFH102N15T substitution

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IXFH102N15T datasheet

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IXFH 100N25P VDSS = 250 V PolarHTTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 27 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continuous 20 V G VGSM ... See More ⇒

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VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1... See More ⇒